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          IKW40N120H3英飞凌IGBT单管

          The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
          英飞凌IKW40N120H3
          英飞凌K40H1203 / IKW40N120H3是英飞凌第三代1200V高开关速度IGBT单管, 能够完美替代K40T120 / K40T1202 ,专用于焊接、太阳能发电逆变器和UPS等IGBT高频应用领域。
          • Low switching losses for high efficiency
          • Fast switching behaviour with low EMI emissions
          • Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
          • Short circuit capability
          • Excellent performance
          • Low switching and conduction losses
          K40H1203 / IKW40N120H3 特点:
          •最高结温度为175℃
          •非常低VCEsat
          •低开关损耗
          •较高的开关坚韧性
          •内置快速恢复反并联二极管
          根据JEDEC1合格为目标
          •无铅引脚电镀符合RoHS标准

           
          应用范围:
          •UPS(不中断电源/不间断电源)
          •焊接器
          •太阳能发电用逆变器

          IKW40N120H3 产品信息:
          集电极直流电流: 40A
          集电极发射饱和电压, Vce: 2.4V
          晶体管封装类型: TO-247
          功耗 Pd: 483W
          产品范围: -
          针脚数: 3引脚
          工作温度最高值: 175°C
          集电极发射电压, Vceo: 1.2kV

          原产地: Philippines
          进行最后一道重要生产流程所在的国家
           
          RoHS 合规:  是
          税则号: 85412900
          重量(千克): .00542

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